High performance solution-processed indium oxide thin-film transistors

Sung Kim Hyun, Paul D. Byrne, Antonio Facchetti*, Tobin Jay Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

177 Scopus citations


In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ∼44 cm2 V-1 s-1 are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of ∼106 and <5 V operating voltages is encouraging for high-speed applications.

Original languageEnglish (US)
Pages (from-to)12580-12581
Number of pages2
JournalJournal of the American Chemical Society
Issue number38
StatePublished - Sep 24 2008

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry


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