High performance solution-processed indium oxide thin-film transistors

Sung Kim Hyun; Paul D. Byrne; Antonio Facchetti; Tobin J. Marks

doi:10.1021/ja804262z

High performance solution-processed indium oxide thin-film transistors

Sung Kim Hyun, Paul D. Byrne, Antonio Facchetti^*, Tobin J. Marks

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

193 Scopus citations

Abstract

In₂O₃ thin-film transistors (TFTs) were fabricated on various dielectrics [SiO₂, self-assembled nanodielectrics (SANDs)] by spin-coating In₂O₃ film precursor solutions consisting of ethanolamine (EAA) and InCl₃ in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In₂O₃ 00 L orientation and are obtained only within a well-defined range of base: In³⁺ molar ratios. Electron mobilities as high as ∼44 cm² V^-1 s^-1 are measured for n⁺-Si/SAND/In₂O₃/Au devices using an EAA/In³⁺ molar ratio = 10. This result combined with I_on/I_off ratios of ∼10⁶ and <5 V operating voltages is encouraging for high-speed applications.

Original language	English (US)
Pages (from-to)	12580-12581
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	130
Issue number	38
DOIs	https://doi.org/10.1021/ja804262z
State	Published - Sep 24 2008

ASJC Scopus subject areas

General Chemistry
Catalysis
Biochemistry
Colloid and Surface Chemistry

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title = "High performance solution-processed indium oxide thin-film transistors",

abstract = "In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ∼44 cm2 V-1 s-1 are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of ∼106 and <5 V operating voltages is encouraging for high-speed applications.",

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AU - Hyun, Sung Kim

AU - Byrne, Paul D.

AU - Facchetti, Antonio

AU - Marks, Tobin J.

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AB - In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ∼44 cm2 V-1 s-1 are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of ∼106 and <5 V operating voltages is encouraging for high-speed applications.

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High performance solution-processed indium oxide thin-film transistors

Abstract

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