High-performance thin-film transistors from solution-processed cadmium selenide and a self-assembled multilayer gate dielectric

A study was conducted to demonstrate the first fabrication of thin-film transistors (TFT), using a solution-processed inorganic semiconductor combined with a solution-processed organic gate dielectric. It was found that the field-effect mobilities demonstrated in the study are as high as 57 cm ²V^-1s^-1, with large l_on/l _offratios and a subthreshold slopes as low as 0.26 V dec ^-1. The study also demonstrated that such performance parameters make these devices suitable for a wide range of applications. It was also demonstrated that TFT results represent a significant step in large-area electronics fabrication, considering the simplicity of the semiconductor and dielectric film deposition methods.