High-performance transparent inorganic-organic hybrid thin-film n-type transistors

Lian Wang*, Myung Han Yoon, Gang Lu, Yu Yang, Antonio Facchetti, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

301 Scopus citations

Abstract

High-performance thin-film transistors (TFTs) that can be fabricated at low temperature and are mechanically flexible, optically transparent and compatible with diverse substrate materials are of great current interest. To function at low biases to minimize power consumption, such devices must also contain a high-mobility semiconductor and/or a high-capacitance gate dielectric. Here we report transparent inorganic-organic hybrid n-type TFTs fabricated at room temperature by combining In2O3 thin films grown by ion-assisted deposition, with nanoscale organic dielectrics self-assembled in a solution-phase process. Such TFTs combine the advantages of a high-mobility transparent inorganic semiconductor with an ultrathin high-capacitance/low-leakage organic gate dielectric. The resulting, completely transparent TFTs exhibit excellent operating characteristics near 1.0V with large field-effect mobilities of >120cm2V1s1, drain-source current on/off modulation ratio (Ion/Ioff)105, near-zero threshold voltages and sub-threshold gate voltage swings of 90mV per decade. The results suggest new strategies for achieving invisibleoptoelectronics.

Original languageEnglish (US)
Pages (from-to)893-900
Number of pages8
JournalNature materials
Volume5
Issue number11
DOIs
StatePublished - Nov 9 2006

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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