High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

M. Razeghi*, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M. Z. Tidrow, V. Nathan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.

Original languageEnglish (US)
Article number08
Pages (from-to)86-87
Number of pages2
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5783
Issue numberPART I
DOIs
StatePublished - Oct 18 2005
EventInfrared Technology and Applications XXXI - Orlando, FL, United States
Duration: Mar 28 2005Apr 1 2005

Keywords

  • Focal plane array
  • GaSb
  • InAs
  • Infrared
  • LWIR
  • MWIR
  • Photodiode
  • Superlattice
  • Type II
  • VLWIR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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