Abstract
We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.
| Original language | English (US) |
|---|---|
| Article number | 08 |
| Pages (from-to) | 86-87 |
| Number of pages | 2 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5783 |
| Issue number | PART I |
| DOIs | |
| State | Published - 2005 |
| Event | Infrared Technology and Applications XXXI - Orlando, FL, United States Duration: Mar 28 2005 → Apr 1 2005 |
Keywords
- Focal plane array
- GaSb
- InAs
- Infrared
- LWIR
- MWIR
- Photodiode
- Superlattice
- Type II
- VLWIR
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
