High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1-xSbx superlattice photodetector by MOCVD

Donghai Wu; Arash Dehzangi; Jiakai Li; Manijeh Razeghi

doi:10.1063/5.0005326

High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs_1-xSb_x superlattice photodetector by MOCVD

Donghai Wu, Arash Dehzangi, Jiakai Li, Manijeh Razeghi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs_1-xSb_x superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R₀A value of 3.2 × 10⁵ ω cm² and a dark current density of 9.6 × 10^-8 A/cm² under an applied bias of-20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 10¹² cm Hz^1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10^-6 A/cm² and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 10¹¹ cm Hz^1/2/W.

Original language	English (US)
Article number	161108
Journal	Applied Physics Letters
Volume	116
Issue number	16
DOIs	https://doi.org/10.1063/5.0005326
State	Published - Apr 20 2020

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0005326

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title = "High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1-xSbx superlattice photodetector by MOCVD",

abstract = "We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1-xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 ω cm2 and a dark current density of 9.6 × 10-8 A/cm2 under an applied bias of-20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10-6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.",

author = "Donghai Wu and Arash Dehzangi and Jiakai Li and Manijeh Razeghi",

year = "2020",

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doi = "10.1063/5.0005326",

language = "English (US)",

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AU - Wu, Donghai

AU - Dehzangi, Arash

AU - Li, Jiakai

AU - Razeghi, Manijeh

PY - 2020/4/20

Y1 - 2020/4/20

N2 - We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1-xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 ω cm2 and a dark current density of 9.6 × 10-8 A/cm2 under an applied bias of-20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10-6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.

AB - We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1-xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 ω cm2 and a dark current density of 9.6 × 10-8 A/cm2 under an applied bias of-20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10-6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.

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