High power, 0.98 μm, Ga_0.8In_0.2As/GaAs/Ga _0.51In_0.49P multiple quantum well laser

Keyphrases

• Power Output 100%
• High Power 100%
• Gallium Arsenide 100%
• Quantum Dot Lasers 100%
• Room Temperature 50%
• Material System 50%
• Continuous-wave Operation 50%
• Low Pressure 50%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Cavity Length 50%
• Broad-area Laser 50%
• Characteristic Temperature 50%
• Differential Quantum Efficiency 50%
• Output Value 50%

Engineering

• Output Power 100%
• Gallium Arsenide 100%
• Quantum Well 100%
• Cavity Length 50%
• Continuous Wave 50%
• Emitting Laser 50%
• Material System 50%
• Laser Wavelength 50%
• Room Temperature 50%
• Quantum Efficiency 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Flat Surface 50%

Physics

• Multiple Quantum Well 100%
• Quantum Well Lasers 100%
• Temperature Characteristics 50%
• Flat Surface 50%
• Room Temperature 50%
• Continuous Radiation 50%
• Metalorganic Chemical Vapor Deposition 50%