High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

K. Mayes*, A. Yasan, Ryan P McClintock, D. Shiell, S. R. Darvish, P. Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

166 Scopus citations

Abstract

A high-power AlGaN-based ultraviolet light-emitting diodes (UV LED) were analyzed. The UV LEDs were grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. For a single 300 μm×300 μm diode, an output power of 1.8 mW at a pulsed current of 400 mA was achieved. The results show that this device reached a high peak external quantum efficiency (EQE) of 0.24% at 40 mA and an array of four diodes produced 6.5 mW at 880 mA of pulsed current.

Original languageEnglish (US)
Pages (from-to)1046-1048
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
StatePublished - Feb 16 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well'. Together they form a unique fingerprint.

Cite this