A high-power AlGaN-based ultraviolet light-emitting diodes (UV LED) were analyzed. The UV LEDs were grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. For a single 300 μm×300 μm diode, an output power of 1.8 mW at a pulsed current of 400 mA was achieved. The results show that this device reached a high peak external quantum efficiency (EQE) of 0.24% at 40 mA and an array of four diodes produced 6.5 mW at 880 mA of pulsed current.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Feb 16 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)