High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

K. Mayes*, A. Yasan, R. McClintock, D. Shiell, S. R. Darvish, P. Kung, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

166 Scopus citations

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Physics & Astronomy