Skip to main navigation
Skip to search
Skip to main content
Northwestern Scholars Home
Help & FAQ
Home
Experts
Organizations
Research Output
Grants
Core Facilities
Research Data
Search by expertise, name or affiliation
High-power Al-free InGaAsP/GaAs near-infrared semiconductor lasers
M. Razeghi
, H. Yi
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'High-power Al-free InGaAsP/GaAs near-infrared semiconductor lasers'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Semiconductor
100%
Characteristics
100%
Efficiency
100%
Optical Loss
100%
Continuous Wave
50%
Fabrication
50%
Emission Wavelength
50%
Output Power
50%
Alloy Composition
50%
Gaas Substrate
50%
Threshold Current Density
50%
Maximum Output Power
50%
Active Region
50%
Loss Spectrum
50%
Laser Performance
50%
Gain Spectrum
50%
High Temperature
50%
Internals
50%
Testing
50%
Models
50%
Temperature
50%
Radiative Recombination
50%
Recombination
50%
Low Pressure
50%
Deposition Technology
50%
Power Laser
50%
INIS
lasers
100%
power
100%
semiconductor lasers
100%
gallium arsenides
100%
efficiency
28%
comparative evaluations
28%
losses
28%
output
28%
operation
28%
recombination
28%
lifetime
14%
testing
14%
growth
14%
devices
14%
fabrication
14%
gain
14%
alloys
14%
performance
14%
substrates
14%
emission
14%
spectra
14%
wavelengths
14%
pulses
14%
high temperature
14%
chemical vapor deposition
14%
fluctuations
14%
low pressure
14%
current density
14%
threshold current
14%
Physics
near Infrared
100%
Semiconductor Laser
100%
Laser
100%
Output
33%
Continuous Radiation
16%
Metalorganic Chemical Vapor Deposition
16%
Temperature Characteristics
16%
High Power Lasers
16%
High Temperature
16%
Growth
16%
Alloy
16%
Fabrication
16%
Performance
16%
Model
16%
Emission
16%
Region
16%
Technology
16%
Calculation
16%
Pulses
16%
Substrates
16%
Variations
16%
Low Pressure
16%
Spectra
16%
Material Science
Gallium Arsenide
100%
Laser
100%
Semiconductor Laser
100%
Temperature
28%
Alloy
14%
Chemical Vapor Deposition
14%
Material
14%
Devices
14%
Density
14%