High power aluminium-free InGaAsP/GaAs pumping diode lasers

M. Razeghi; I. Eliashevich; J. Diaz; H. J. Yi; S. Kim; M. Erdtmann; D. Wu; L. J. Wang

doi:10.1016/0921-5107(95)01368-7

High power aluminium-free InGaAsP/GaAs pumping diode lasers

M. Razeghi^*, I. Eliashevich, J. Diaz, H. J. Yi, S. Kim, M. Erdtmann, D. Wu, L. J. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm^-2, differential efficiency of 1.3 W A^-1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.

Original language	English (US)
Pages (from-to)	34-41
Number of pages	8
Journal	Materials Science and Engineering B
Volume	35
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01368-7
State	Published - Dec 1995

Keywords

Metal-organic chemical vapour deposition

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(95)01368-7

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title = "High power aluminium-free InGaAsP/GaAs pumping diode lasers",

abstract = "We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm-2, differential efficiency of 1.3 W A-1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.",

keywords = "Metal-organic chemical vapour deposition",

author = "M. Razeghi and I. Eliashevich and J. Diaz and Yi, {H. J.} and S. Kim and M. Erdtmann and D. Wu and Wang, {L. J.}",

year = "1995",

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T1 - High power aluminium-free InGaAsP/GaAs pumping diode lasers

AU - Razeghi, M.

AU - Eliashevich, I.

AU - Diaz, J.

AU - Yi, H. J.

AU - Kim, S.

AU - Erdtmann, M.

AU - Wu, D.

AU - Wang, L. J.

PY - 1995/12

Y1 - 1995/12

N2 - We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm-2, differential efficiency of 1.3 W A-1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.

AB - We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm-2, differential efficiency of 1.3 W A-1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.

KW - Metal-organic chemical vapour deposition

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DO - 10.1016/0921-5107(95)01368-7

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VL - 35

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JO - Materials Science and Engineering B

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ER -

High power aluminium-free InGaAsP/GaAs pumping diode lasers

Abstract

Keywords

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