High power aluminium-free InGaAsP/GaAs pumping diode lasers

M. Razeghi*, I. Eliashevich, J. Diaz, H. J. Yi, S. Kim, M. Erdtmann, D. Wu, L. J. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We have developed low pressure metal-organic chemical vapour deposition technology for the growth of aluminium-free InGaAsP compounds lattice-matched to GaAs substrate. High power laser diodes based on these materials and emitting at 808 nm and 890 nm wavelengths have been fabricated and optimized. A threshold current density of 240 A cm-2, differential efficiency of 1.3 W A-1, characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-continuous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetime in excess of 100 years) and they are suitable for a broad range of pumping applications.

Original languageEnglish (US)
Pages (from-to)34-41
Number of pages8
JournalMaterials Science and Engineering B
Volume35
Issue number1-3
DOIs
StatePublished - Dec 1995

Keywords

  • Metal-organic chemical vapour deposition

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'High power aluminium-free InGaAsP/GaAs pumping diode lasers'. Together they form a unique fingerprint.

  • Cite this

    Razeghi, M., Eliashevich, I., Diaz, J., Yi, H. J., Kim, S., Erdtmann, M., Wu, D., & Wang, L. J. (1995). High power aluminium-free InGaAsP/GaAs pumping diode lasers. Materials Science and Engineering B, 35(1-3), 34-41. https://doi.org/10.1016/0921-5107(95)01368-7