High power and reliable semiconductor laser diodes for WDM applications

M. Razeghi; S. Slivken; Y. S. Park

doi:10.1117/12.537538

High power and reliable semiconductor laser diodes for WDM applications

M. Razeghi^*, S. Slivken, Y. S. Park

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The mid-infrared (3< λ< 5 μm) and far-infrared (8< λ< 14 μm) spectral regions are presented as a viable, yet underutilized spectral region that would be suitable for multiple WDM communication applications. Historically limited by the laser source, the quantum cascade laser, thanks to recent advances in performance, is proposed as a realistic source for addressing this spectral region. The current status of the laser technology is reviewed, as well the future outlook for this technology for WDM communication.

Original language	English (US)
Pages (from-to)	13-20
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5356
DOIs	https://doi.org/10.1117/12.537538
State	Published - 2004
Event	Optoelectronic Integrated Circuits VI - San Jose, CA, United States Duration: Jan 26 2004 → Jan 26 2004

Keywords

Free-space communications
High power semiconductor lasers
Mid-infrared
Molecular beam epitaxy
Quantum cascade laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.537538

Cite this

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title = "High power and reliable semiconductor laser diodes for WDM applications",

abstract = "The mid-infrared (3< λ< 5 μm) and far-infrared (8< λ< 14 μm) spectral regions are presented as a viable, yet underutilized spectral region that would be suitable for multiple WDM communication applications. Historically limited by the laser source, the quantum cascade laser, thanks to recent advances in performance, is proposed as a realistic source for addressing this spectral region. The current status of the laser technology is reviewed, as well the future outlook for this technology for WDM communication.",

keywords = "Free-space communications, High power semiconductor lasers, Mid-infrared, Molecular beam epitaxy, Quantum cascade laser",

author = "M. Razeghi and S. Slivken and Park, {Y. S.}",

year = "2004",

doi = "10.1117/12.537538",

language = "English (US)",

volume = "5356",

pages = "13--20",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Optoelectronic Integrated Circuits VI ; Conference date: 26-01-2004 Through 26-01-2004",

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TY - JOUR

T1 - High power and reliable semiconductor laser diodes for WDM applications

AU - Razeghi, M.

AU - Slivken, S.

AU - Park, Y. S.

PY - 2004

Y1 - 2004

N2 - The mid-infrared (3< λ< 5 μm) and far-infrared (8< λ< 14 μm) spectral regions are presented as a viable, yet underutilized spectral region that would be suitable for multiple WDM communication applications. Historically limited by the laser source, the quantum cascade laser, thanks to recent advances in performance, is proposed as a realistic source for addressing this spectral region. The current status of the laser technology is reviewed, as well the future outlook for this technology for WDM communication.

AB - The mid-infrared (3< λ< 5 μm) and far-infrared (8< λ< 14 μm) spectral regions are presented as a viable, yet underutilized spectral region that would be suitable for multiple WDM communication applications. Historically limited by the laser source, the quantum cascade laser, thanks to recent advances in performance, is proposed as a realistic source for addressing this spectral region. The current status of the laser technology is reviewed, as well the future outlook for this technology for WDM communication.

KW - Free-space communications

KW - High power semiconductor lasers

KW - Mid-infrared

KW - Molecular beam epitaxy

KW - Quantum cascade laser

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DO - 10.1117/12.537538

M3 - Conference article

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SN - 0277-786X

VL - 5356

SP - 13

EP - 20

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Integrated Circuits VI

Y2 - 26 January 2004 through 26 January 2004

ER -

High power and reliable semiconductor laser diodes for WDM applications

Abstract

Keywords

ASJC Scopus subject areas

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