High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

D. Wu*, B. Lane, H. Mohseni, J. Diaz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Midinfrared lasers with an asymmetrical InPAsSb/InAsSb/AlAsSb double heterostructure are reported. Using the asymmetrical double heterostructure, p- and n-cladding layers are separately optimized; high energy-gap AlAsSb (Eg ≈ 1.5 eV) for the p-type cladding layer to reduce the leakage current, and thus to increase To, and low energy-gap InPAsSb (Eg ≈ 0.5 eV) for the n-cladding layer to have low turn-on voltage. 100-μm-width broad-area lasers with 1000 μm cavity length exhibited peak output powers of 1.88 W in pulse and 350 mW in continuous wave modes per two facets at T=80 K with To of 54 K and turn-on voltage of 0.36 V. Maximum peak output powers up to 6.7 W were obtained from a laser bar of total aperture of 400 μm width and cavity length of 1000 μm, with a differential efficiency of 34% and far-field beam divergence narrower than 40° at 80 K.

Original languageEnglish (US)
Pages (from-to)1194-1196
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number9
DOIs
StatePublished - Mar 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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