High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm

S. Slivken; A. Evans; W. Zhang; M. Razeghi

doi:10.1063/1.2722190

High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm

S. Slivken^*, A. Evans, W. Zhang, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 μm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact.

Original language	English (US)
Article number	151115
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2722190
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2722190

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title = "High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm",

abstract = "In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 μm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact.",

author = "S. Slivken and A. Evans and W. Zhang and M. Razeghi",

note = "Funding Information: The authors would like to thank Y. Bai, J. Nguyen, J. S. Yu, S. R. Darvish, and K. Mi at the Center for Quantum Devices for their support and effort. The authors would also like to acknowledge the support, interest, and encouragement of H. Temkin and M. Rosker from Defense Advanced Research Projects Agency, J. Meyer from Naval Research Laboratory, M. Gerhold from Army Research Office, and M. Gross from Office of Naval Research.",

year = "2007",

doi = "10.1063/1.2722190",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm

AU - Slivken, S.

AU - Evans, A.

AU - Zhang, W.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to thank Y. Bai, J. Nguyen, J. S. Yu, S. R. Darvish, and K. Mi at the Center for Quantum Devices for their support and effort. The authors would also like to acknowledge the support, interest, and encouragement of H. Temkin and M. Rosker from Defense Advanced Research Projects Agency, J. Meyer from Naval Research Laboratory, M. Gerhold from Army Research Office, and M. Gross from Office of Naval Research.

PY - 2007

Y1 - 2007

N2 - In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 μm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact.

AB - In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 μm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact.

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High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm

Abstract

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