In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 μm is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)