Abstract
Limiting factors for short-wavelength QCL designs are discussed, and a model is described to predict the short-wavelength limit for strain-balanced QCL structures. High performance is predicted at wavelengths as short as 3.0μm based on a conduction band offset of 0.9 eV in the GaInAs/AlInAs materials. Recent work is presented on the growth of strained materials using gas-source molecular beam epitaxy to investigate the model predictions. Advanced material characterization, including HR-STEM, high-resolution x-ray diffraction, photoluminescence, atomic force microscopy, and wafer-scale uniformity and repeatability are demonstrated for strain-balanced QCL structures. Laser testing results are presented for QCLs operating at ∼4.8μm, and lastly, predictions for further performance improvement at short wavelengths are discussed.
| Original language | English (US) |
|---|---|
| Article number | 05 |
| Pages (from-to) | 54-63 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 5840 PART I |
| DOIs | |
| State | Published - 2005 |
| Event | Photonic Materials, Devices, and Applications - Seville, Spain Duration: May 9 2005 → May 11 2005 |
Keywords
- Gas Source Molecular Beam Epitaxy
- InP
- Intersubband Transition
- Mid-infrared
- Quantum Cascade Laser
- Strain-Balanced
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering