High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

N. Bandyopadhyay; S. Slivken; Y. Bai; M. Razeghi

doi:10.1063/1.4719110

High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

N. Bandyopadhyay^*, S. Slivken, Y. Bai, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers emitting near 3.39 and 3.56 μm. A pulsed threshold current density of only 1.1 kA/cm ² has been achieved at room temperature for both lasers with characteristic temperatures (T ₀) of 166 K and 152 K, respectively. The slope efficiency is also relatively temperature insensitive with characteristic temperatures (T ₁) of 116 K and 191 K, respectively. Continuous wave powers of 504 mW and 576 mW are obtained at room temperature, respectively. This was accomplished without buried ridge processing.

Original language	English (US)
Article number	212104
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4719110
State	Published - May 21 2012

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Physics and Astronomy (miscellaneous)

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title = "High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers",

abstract = "We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers emitting near 3.39 and 3.56 μm. A pulsed threshold current density of only 1.1 kA/cm 2 has been achieved at room temperature for both lasers with characteristic temperatures (T 0) of 166 K and 152 K, respectively. The slope efficiency is also relatively temperature insensitive with characteristic temperatures (T 1) of 116 K and 191 K, respectively. Continuous wave powers of 504 mW and 576 mW are obtained at room temperature, respectively. This was accomplished without buried ridge processing.",

author = "N. Bandyopadhyay and S. Slivken and Y. Bai and M. Razeghi",

year = "2012",

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T1 - High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

AU - Bandyopadhyay, N.

AU - Slivken, S.

AU - Bai, Y.

AU - Razeghi, M.

PY - 2012/5/21

Y1 - 2012/5/21

N2 - We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers emitting near 3.39 and 3.56 μm. A pulsed threshold current density of only 1.1 kA/cm 2 has been achieved at room temperature for both lasers with characteristic temperatures (T 0) of 166 K and 152 K, respectively. The slope efficiency is also relatively temperature insensitive with characteristic temperatures (T 1) of 116 K and 191 K, respectively. Continuous wave powers of 504 mW and 576 mW are obtained at room temperature, respectively. This was accomplished without buried ridge processing.

AB - We report two highly strain-balanced InP-based AlInAs/GaInAs quantum cascade lasers emitting near 3.39 and 3.56 μm. A pulsed threshold current density of only 1.1 kA/cm 2 has been achieved at room temperature for both lasers with characteristic temperatures (T 0) of 166 K and 152 K, respectively. The slope efficiency is also relatively temperature insensitive with characteristic temperatures (T 1) of 116 K and 191 K, respectively. Continuous wave powers of 504 mW and 576 mW are obtained at room temperature, respectively. This was accomplished without buried ridge processing.

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IS - 21

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High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

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