Abstract
Limiting factors for short-wavelength CW QCL designs are discussed. A model is used to predict the short-wavelength cutoff for strain-balanced QCL structures. High performance is predicted at wavelengths as short as 3.0μm based on a conduction band offset of 0.9 eV in the GalnAs/AlInAs materials. Recent work is presented on the growth of strained materials using gas-source molecular beam epitaxy to investigate the model predictions. Advanced material characterization, including high-resolution x-ray diffraction, photoluminescence, atomic force microscopy, and wafer-scale uniformity and repeatability are demonstrated for highly-strained and strain-balanced QCL structures. Laser testing results are presented for QCLs operating near the short wavelength limit at 3.66μm. Lastly, predictions for further performance improvement at short wavelengths are discussed.
| Original language | English (US) |
|---|---|
| Article number | 01 |
| Pages (from-to) | 1-12 |
| Number of pages | 12 |
| Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
| Volume | 5738 |
| DOIs | |
| State | Published - 2005 |
| Event | Novel In-Plane Semiconductor Lasers IV - San Jose, CA, United States Duration: Jan 24 2005 → Jan 27 2005 |
Keywords
- Gas Source Molecular Beam Epitaxy
- InP
- Intersubband Transition
- Mid-infrared
- Quantum Cascade Laser
- Strain-Balanced
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Radiology Nuclear Medicine and imaging
- Biomaterials