TY - JOUR
T1 - High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD
AU - Lane, B.
AU - Razeghi, M.
N1 - Funding Information:
The authors would like to acknowledge Dr. Z. Wu for the measurements of the lasers and Dr. L.N. Durvasula and Dr. H.O. Everitt for their continuing encouragement and support. This work is supported by DARPA/U.S. Army under contract No. DAAH04-95-1-0343.
PY - 2000/12
Y1 - 2000/12
N2 - Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.
AB - Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.
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U2 - 10.1016/S0022-0248(00)00799-5
DO - 10.1016/S0022-0248(00)00799-5
M3 - Article
AN - SCOPUS:0034497058
SN - 0022-0248
VL - 221
SP - 679
EP - 682
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -