High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

B. Lane; M. Razeghi

doi:10.1016/S0022-0248(00)00799-5

High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

B. Lane^*, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm^-2 and output powers over 900 mW.

Original language	English (US)
Pages (from-to)	679-682
Number of pages	4
Journal	Journal of Crystal Growth
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(00)00799-5
State	Published - Dec 2000

Funding

The authors would like to acknowledge Dr. Z. Wu for the measurements of the lasers and Dr. L.N. Durvasula and Dr. H.O. Everitt for their continuing encouragement and support. This work is supported by DARPA/U.S. Army under contract No. DAAH04-95-1-0343.

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00799-5

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@article{ec1983453ce44ebb9de36f7a40c96a05,

title = "High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD",

abstract = "Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.",

author = "B. Lane and M. Razeghi",

note = "Funding Information: The authors would like to acknowledge Dr. Z. Wu for the measurements of the lasers and Dr. L.N. Durvasula and Dr. H.O. Everitt for their continuing encouragement and support. This work is supported by DARPA/U.S. Army under contract No. DAAH04-95-1-0343.",

year = "2000",

month = dec,

doi = "10.1016/S0022-0248(00)00799-5",

language = "English (US)",

volume = "221",

pages = "679--682",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

AU - Lane, B.

AU - Razeghi, M.

N1 - Funding Information: The authors would like to acknowledge Dr. Z. Wu for the measurements of the lasers and Dr. L.N. Durvasula and Dr. H.O. Everitt for their continuing encouragement and support. This work is supported by DARPA/U.S. Army under contract No. DAAH04-95-1-0343.

PY - 2000/12

Y1 - 2000/12

N2 - Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.

AB - Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.

UR - http://www.scopus.com/inward/record.url?scp=0034497058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034497058&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00799-5

DO - 10.1016/S0022-0248(00)00799-5

M3 - Article

AN - SCOPUS:0034497058

SN - 0022-0248

VL - 221

SP - 679

EP - 682

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

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