High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

B. Lane*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A double heterostructure laser based on InAsSbP emitting at 3.2 μm emits at powers up to 450 mW in continuous mode operation. Additionally, superlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 μm. These lasers demonstrate threshold current densities as low as 67 A cm-2 and output powers over 900 mW.

Original languageEnglish (US)
Pages (from-to)679-682
Number of pages4
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
StatePublished - Dec 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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