High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

B. Lane; S. Tong; J. Diaz; Z. Wu; M. Razeghi

doi:10.1016/S0921-5107(99)00533-4

High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

B. Lane^*, S. Tong, J. Diaz, Z. Wu, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm^-2 and output powers up to 546 mW.

Original language	English (US)
Pages (from-to)	52-55
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	74
Issue number	1
DOIs	https://doi.org/10.1016/S0921-5107(99)00533-4
State	Published - May 1 2000
Event	3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey Duration: Sep 15 1999 → Sep 17 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm",

abstract = "Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm-2 and output powers up to 546 mW.",

author = "B. Lane and S. Tong and J. Diaz and Z. Wu and M. Razeghi",

year = "2000",

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doi = "10.1016/S0921-5107(99)00533-4",

language = "English (US)",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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note = "3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) ; Conference date: 15-09-1999 Through 17-09-1999",

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T1 - High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

AU - Lane, B.

AU - Tong, S.

AU - Diaz, J.

AU - Wu, Z.

AU - Razeghi, M.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm-2 and output powers up to 546 mW.

AB - Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm-2 and output powers up to 546 mW.

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DO - 10.1016/S0921-5107(99)00533-4

M3 - Conference article

AN - SCOPUS:0033730098

SN - 0921-5107

VL - 74

SP - 52

EP - 55

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1

T2 - 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99)

Y2 - 15 September 1999 through 17 September 1999

ER -

High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

Abstract

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