High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm

B. Lane*, S. Tong, J. Diaz, Z. Wu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm-2 and output powers up to 546 mW.

Original languageEnglish (US)
Pages (from-to)52-55
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume74
Issue number1
DOIs
StatePublished - May 1 2000
Event3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey
Duration: Sep 15 1999Sep 17 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm'. Together they form a unique fingerprint.

  • Cite this