Abstract
Broad-area, electrical injection, interband mid-infrared lasers emitting between 3.2 and 4.7 μm have been grown by low-pressure metal organic chemical vapor deposition. A InAsSbP based double heterostructure laser emitting at 3.2 μm is reported to produce 450 mW in continuous mode operation. Furthermore, the InAsSb and InAsP alloys have been used for the growth of strained-layer superlattice lasers emitting above 4.0 μm. These lasers demonstrate threshold current densities as low as 100 A cm-2 and output powers up to 546 mW.
Original language | English (US) |
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Pages (from-to) | 52-55 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 74 |
Issue number | 1 |
DOIs | |
State | Published - May 1 2000 |
Event | 3rd International Conference on Low Dimensional Structures and Devices (LDSD'99) - Antalya, Turkey Duration: Sep 15 1999 → Sep 17 1999 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering