High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range

Manijeh Razeghi*, Jacqueline E. Diaz, Hyuk J. Yi, D. Wu, B. Lane, Adam Rybaltowski, Y. H. Xiao, Harry Jeon

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70% up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Original languageEnglish (US)
Pages (from-to)14-24
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2997
DOIs
StatePublished - Dec 1 1997
EventIntegrated Optics Devices: Potential for Commercialization - San Jose, CA, United States
Duration: Feb 12 1997Feb 12 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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