High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range

Manijeh Razeghi; Jacqueline E. Diaz; Hyuk J. Yi; D. Wu; B. Lane; Adam Rybaltowski; Y. H. Xiao; Harry Jeon

doi:10.1117/12.264148

High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range

Manijeh Razeghi^*, Jacqueline E. Diaz, Hyuk J. Yi, D. Wu, B. Lane, Adam Rybaltowski, Y. H. Xiao, Harry Jeon

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70% up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm² at 78K were achieved from the double- heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Original language	English (US)
Pages (from-to)	14-24
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2997
DOIs	https://doi.org/10.1117/12.264148
State	Published - 1997
Event	Integrated Optics Devices: Potential for Commercialization - San Jose, CA, United States Duration: Feb 12 1997 → Feb 12 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.264148

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@article{da28c571c3b5489a9368089253f223aa,

title = "High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range",

abstract = "We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70% up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.",

author = "Manijeh Razeghi and Diaz, {Jacqueline E.} and Yi, {Hyuk J.} and D. Wu and B. Lane and Adam Rybaltowski and Xiao, {Y. H.} and Harry Jeon",

year = "1997",

doi = "10.1117/12.264148",

language = "English (US)",

volume = "2997",

pages = "14--24",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Integrated Optics Devices: Potential for Commercialization ; Conference date: 12-02-1997 Through 12-02-1997",

}

TY - JOUR

T1 - High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range

AU - Razeghi, Manijeh

AU - Diaz, Jacqueline E.

AU - Yi, Hyuk J.

AU - Wu, D.

AU - Lane, B.

AU - Rybaltowski, Adam

AU - Xiao, Y. H.

AU - Jeon, Harry

PY - 1997

Y1 - 1997

N2 - We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70% up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

AB - We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70% up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78K were achieved from the double- heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the sue of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

UR - http://www.scopus.com/inward/record.url?scp=0002854825&partnerID=8YFLogxK

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U2 - 10.1117/12.264148

DO - 10.1117/12.264148

M3 - Conference article

AN - SCOPUS:0002854825

SN - 0277-786X

VL - 2997

SP - 14

EP - 24

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Integrated Optics Devices: Potential for Commercialization

Y2 - 12 February 1997 through 12 February 1997

ER -

High-power InAsSb/InAsSbP laser diodes emitting at 3-5 μm range

Abstract

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