High power InAsSb/InAsSbP laser diodes emitting at 3 approximately 5 μm range

Manijeh Razeghi*, J. Diaz, H. J. Yi, Donghai Wu, B. Lane, A. Rybaltowski, Y. Xiao, H. Jeon

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Original languageEnglish (US)
Pages (from-to)13-22
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Volume450
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 4 1996Dec 5 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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