High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics

J. Diaz; I. Eliashevich; X. He; H. Yi; L. Wang; E. Kolev; D. Garbuzov; M. Razeghi

doi:10.1063/1.112206

High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics

J. Diaz^*, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article

17 Scopus citations

Abstract

High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm², differential efficiency of 1.1 W/A, T ₀=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.

Original language	English (US)
Pages (from-to)	1004-1005
Number of pages	2
Journal	Applied Physics Letters
Volume	65
Issue number	8
DOIs	https://doi.org/10.1063/1.112206
State	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Diaz, J., Eliashevich, I., He, X., Yi, H., Wang, L., Kolev, E., Garbuzov, D., & Razeghi, M. (1994). High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics. Applied Physics Letters, 65(8), 1004-1005. https://doi.org/10.1063/1.112206

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abstract = "High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T 0=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.",

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AU - Diaz, J.

AU - Eliashevich, I.

AU - He, X.

AU - Yi, H.

AU - Wang, L.

AU - Kolev, E.

AU - Garbuzov, D.

AU - Razeghi, M.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T 0=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.

AB - High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T 0=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.

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