High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics

J. Diaz*, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T 0=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.

Original languageEnglish (US)
Pages (from-to)1004-1005
Number of pages2
JournalApplied Physics Letters
Volume65
Issue number8
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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