Abstract
High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T 0=155°C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.
Original language | English (US) |
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Pages (from-to) | 1004-1005 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 65 |
Issue number | 8 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)