High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

Steven Boyd Slivken, Nirajman Shrestha, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that of InP (0.587 nm). The laser geometry utilizes two top contacts in order to be compatible with future large-scale integration. Unlike previous reports, this device is capable of room temperature operation with up to 1.6 W of peak power. The emission wavelength at 293 K is 4.82 μm, and the device operates in the fundamental transverse mode.

Original languageEnglish (US)
Article number626
Issue number9
StatePublished - Sep 2022


  • mismatched epitaxy
  • monolithic integration
  • quantum cascade laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Radiology Nuclear Medicine and imaging


Dive into the research topics of 'High Power Mid-Infrared Quantum Cascade Lasers Grown on Si'. Together they form a unique fingerprint.

Cite this