High power quantum cascade lasers grown by GasMBE

M. Razeghi*, S. Slivken

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers (QCLs) produced at the Centre for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Recent work has focused on the development of high peak and average power QCLs emitting at room temperature and above. Scaling of the output is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 μm, over 7 W of peak power has bee demonstrated at room temperature for a single diode, with an average power of 300 mW at 6% duty cycle. At shorter wavelengths, laser development includes the use of highly strain-balanced heterostructures in order to maintain a high conduction band offset and minimize leakage current. At λ = 6 μm, utilizing a high reflective coating and epilayer-down mounting of the laser, we have demonstrated 225 mW of average power from a single facet at room temperature. Lastly, these results are put in the perspective of other reported results and possible future directions are discussed.

Original languageEnglish (US)
Pages (from-to)85-91
Number of pages7
JournalOpto-electronics Review
Volume11
Issue number2
StatePublished - Jan 1 2003

Keywords

  • High power
  • Molecular beam epitaxy
  • Quantum cascade laser

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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