High power quantum cascade lasers (QCLs) grown by GasMBE

Manijeh Razeghi*, Steven Boyd Slivken

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers produced at the Centre for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Recent work has focused on the development of high peak and average power QCLs emitting at room temperature and above. Scaling of the output is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 μm, over 7 W of peak power has been demonstrated at room temperature for a single diode, with an average power of 300 mW at 6% duty cycle. At shorter wavelengths, laser development includes the use of highly strain-balanced heterostructures in order to maintain a high conduction band offset and minimize leakage current. At λ = 6 μm, utilizing a high reflective coating and epilayer-down mounting of the laser, we have demonstrated 225 mW of average power from a single facet at room temperature. Lastly, these results are put in the perspective of other reported results and possible future directions are discussed.

Original languageEnglish (US)
Pages (from-to)317-324
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Dec 1 2002
EventSolid State Crytals 2002 Crystalline Materials for Optoelectronics - Zakopane, Poland
Duration: Oct 14 2002Oct 18 2002


  • High power
  • Molecular beam epitaxy
  • Quantum cascade laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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