High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

Steven Slivken, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of $10.8~\mu \text{m}$ and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation.

Original languageEnglish (US)
Article number2300206
JournalIEEE Journal of Quantum Electronics
Issue number6
StatePublished - Dec 1 2022


  • heteroepitaxy
  • monolithic integration
  • Quantum cascade laser

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si'. Together they form a unique fingerprint.

Cite this