High-purity GaAs layers grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi*, F. Omnes, J. Nagle, M. Defour, O. Acher, P. Bove

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report electrical and optical properties of very high purity GaAs epilayers grown by low-pressure metalorganic chemical vapor deposition using AsH3 and triethylgallium as As and Ga sources. An electron mobility of 335 000 cm2/V s at 38 K has been measured for a 12-μ-thick layer.

Original languageEnglish (US)
Pages (from-to)1677-1679
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number16
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-purity GaAs layers grown by low-pressure metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this