High quality a-Si/Nb and a-SiN/NbN artificial multilayers for josephson applications

J. Chen; E. D. Rippert; S. N. Song; M. P. Ulmer; J. B. Ketterson

doi:10.1557/JMR.1994.1678

High quality a-Si/Nb and a-SiN/NbN artificial multilayers for josephson applications

J. Chen, E. D. Rippert, S. N. Song^*, M. P. Ulmer, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A high resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering shows that the morphology of the growing interfaces in a-Si/Nb and a-SiN/NbN multilayers is remarkably uniform and smooth; this is in contrast to the polycrystalline AlN/NbN multilayers grown under similar conditions, which exhibit columnar grain structure with rough interfaces. For proper sputtering parameters, the amorphous layers seem to periodically restore a relatively smooth initial interface condition for the successive Nb (or NbN) layer growth, consequently interrupting the tendency toward increased roughness due to mechanisms such as columnar growth. Artificial multilayers having very flat interfaces could stimulate applications based on multilayer Josephson junctions.

Original language	English (US)
Pages (from-to)	1678-1682
Number of pages	5
Journal	Journal of Materials Research
Volume	9
Issue number	7
DOIs	https://doi.org/10.1557/JMR.1994.1678
State	Published - Jul 1994

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "High quality a-Si/Nb and a-SiN/NbN artificial multilayers for josephson applications",

abstract = "A high resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering shows that the morphology of the growing interfaces in a-Si/Nb and a-SiN/NbN multilayers is remarkably uniform and smooth; this is in contrast to the polycrystalline AlN/NbN multilayers grown under similar conditions, which exhibit columnar grain structure with rough interfaces. For proper sputtering parameters, the amorphous layers seem to periodically restore a relatively smooth initial interface condition for the successive Nb (or NbN) layer growth, consequently interrupting the tendency toward increased roughness due to mechanisms such as columnar growth. Artificial multilayers having very flat interfaces could stimulate applications based on multilayer Josephson junctions.",

author = "J. Chen and Rippert, {E. D.} and Song, {S. N.} and Ulmer, {M. P.} and Ketterson, {J. B.}",

note = "Funding Information: work was supported by NASA Innovative Project Program under Contract NAGW-2859. made of facilities operated by the Materials Center of Northwestern University.",

year = "1994",

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doi = "10.1557/JMR.1994.1678",

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T1 - High quality a-Si/Nb and a-SiN/NbN artificial multilayers for josephson applications

AU - Chen, J.

AU - Rippert, E. D.

AU - Song, S. N.

AU - Ulmer, M. P.

AU - Ketterson, J. B.

N1 - Funding Information: work was supported by NASA Innovative Project Program under Contract NAGW-2859. made of facilities operated by the Materials Center of Northwestern University.

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Y1 - 1994/7

N2 - A high resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering shows that the morphology of the growing interfaces in a-Si/Nb and a-SiN/NbN multilayers is remarkably uniform and smooth; this is in contrast to the polycrystalline AlN/NbN multilayers grown under similar conditions, which exhibit columnar grain structure with rough interfaces. For proper sputtering parameters, the amorphous layers seem to periodically restore a relatively smooth initial interface condition for the successive Nb (or NbN) layer growth, consequently interrupting the tendency toward increased roughness due to mechanisms such as columnar growth. Artificial multilayers having very flat interfaces could stimulate applications based on multilayer Josephson junctions.

AB - A high resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering shows that the morphology of the growing interfaces in a-Si/Nb and a-SiN/NbN multilayers is remarkably uniform and smooth; this is in contrast to the polycrystalline AlN/NbN multilayers grown under similar conditions, which exhibit columnar grain structure with rough interfaces. For proper sputtering parameters, the amorphous layers seem to periodically restore a relatively smooth initial interface condition for the successive Nb (or NbN) layer growth, consequently interrupting the tendency toward increased roughness due to mechanisms such as columnar growth. Artificial multilayers having very flat interfaces could stimulate applications based on multilayer Josephson junctions.

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High quality a-Si/Nb and a-SiN/NbN artificial multilayers for josephson applications

Abstract

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