High quality AIN and GaN epilayers grown on (001) sapphire, (100), and (111) silicon substrates

P. Kung*, A. Saxler, X. Zhang, D. Walker, T. C. Wang, I. Ferguson, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

178 Scopus citations

Abstract

The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X-ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire, respectively. Room-temperature optical transmission and photoluminescence (of GaN) measurements confirmed the high quality of the films. The luminescence at 300 and 77 K of the GaN films grown on basal plane sapphire, (100), and (111) silicon was compared.

Original languageEnglish (US)
Pages (from-to)2958
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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