High quality aluminum nitride epitaxial layers grown on sapphire substrates

A. Saxler; P. Kung; C. J. Sun; E. Bigan; M. Razeghi

doi:10.1063/1.111168

High quality aluminum nitride epitaxial layers grown on sapphire substrates

A. Saxler^*, P. Kung, C. J. Sun, E. Bigan, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (001) sapphire exhibited a better crystalline quality than that grown on (012) sapphire. An x-ray rocking curve of AlN on (001) Al₂O₃ yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (012) Al₂O₃ was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (001) Al₂O₃ was about 197 nm.

Original language	English (US)
Pages (from-to)	339-341
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	3
DOIs	https://doi.org/10.1063/1.111168
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111168

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title = "High quality aluminum nitride epitaxial layers grown on sapphire substrates",

abstract = "In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (001) sapphire exhibited a better crystalline quality than that grown on (012) sapphire. An x-ray rocking curve of AlN on (001) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (012) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (001) Al2O3 was about 197 nm.",

author = "A. Saxler and P. Kung and Sun, {C. J.} and E. Bigan and M. Razeghi",

year = "1994",

doi = "10.1063/1.111168",

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journal = "Applied Physics Letters",

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T1 - High quality aluminum nitride epitaxial layers grown on sapphire substrates

AU - Saxler, A.

AU - Kung, P.

AU - Sun, C. J.

AU - Bigan, E.

AU - Razeghi, M.

PY - 1994

Y1 - 1994

N2 - In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (001) sapphire exhibited a better crystalline quality than that grown on (012) sapphire. An x-ray rocking curve of AlN on (001) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (012) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (001) Al2O3 was about 197 nm.

AB - In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (001) sapphire exhibited a better crystalline quality than that grown on (012) sapphire. An x-ray rocking curve of AlN on (001) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (012) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (001) Al2O3 was about 197 nm.

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High quality aluminum nitride epitaxial layers grown on sapphire substrates

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