High quality aluminum nitride epitaxial layers grown on sapphire substrates

A. Saxler*, P. Kung, C. J. Sun, E. Bigan, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

91 Scopus citations

Abstract

In this letter we report the growth of high quality AlN epitaxial layers on sapphire substrates. The AlN grown on (001) sapphire exhibited a better crystalline quality than that grown on (012) sapphire. An x-ray rocking curve of AlN on (001) Al2O3 yielded a full width at half-maximum of 97.2 arcsec, which is the narrowest value reported to our knowledge. The AlN peak on (012) Al2O3 was about 30 times wider. The absorption edge measured by ultraviolet transmission spectroscopy for AlN grown on (001) Al2O3 was about 197 nm.

Original languageEnglish (US)
Pages (from-to)339-341
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number3
DOIs
StatePublished - 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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