High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

M. Razeghi*, F. Omnes, M. Defour, Ph Maurel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga xIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.

Original languageEnglish (US)
Pages (from-to)209-211
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number3
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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