High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

M. Razeghi; F. Omnes; M. Defour; Ph Maurel

doi:10.1063/1.99521

High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

M. Razeghi^*, F. Omnes, M. Defour, Ph Maurel

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga _xIn_1-xAs_yP_1-y has been recorded at room temperature, at the expected value of 1.3 μm.

Original language	English (US)
Pages (from-to)	209-211
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	3
DOIs	https://doi.org/10.1063/1.99521
State	Published - Dec 1 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.99521

Fingerprint Dive into the research topics of 'High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates'. Together they form a unique fingerprint.

Cite this

@article{e216d2d0c89b41fa8865cf8d5451ac3d,

title = "High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates",

abstract = "High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga xIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.",

author = "M. Razeghi and F. Omnes and M. Defour and Ph Maurel",

year = "1988",

month = dec,

day = "1",

doi = "10.1063/1.99521",

language = "English (US)",

volume = "52",

pages = "209--211",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

AU - Razeghi, M.

AU - Omnes, F.

AU - Defour, M.

AU - Maurel, Ph

PY - 1988/12/1

Y1 - 1988/12/1

N2 - High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga xIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.

AB - High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga xIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.

UR - http://www.scopus.com/inward/record.url?scp=36549092661&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549092661&partnerID=8YFLogxK

U2 - 10.1063/1.99521

DO - 10.1063/1.99521

M3 - Article

AN - SCOPUS:36549092661

VL - 52

SP - 209

EP - 211

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -