Abstract
High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy Ga xIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.
Original language | English (US) |
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Pages (from-to) | 209-211 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 52 |
Issue number | 3 |
DOIs | |
State | Published - Dec 1 1988 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)