High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

Manijeh Razeghi*, P. Kung, D. Walker, M. Hamilton, J. Diaz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

Original languageEnglish (US)
Pages (from-to)14-20
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3725
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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