High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

Manijeh Razeghi; P. Kung; D. Walker; M. Hamilton; J. Diaz

High quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates

Manijeh Razeghi^*, P. Kung, D. Walker, M. Hamilton, J. Diaz

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al₂O₃ and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

Original language	English (US)
Pages (from-to)	14-20
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3725
State	Published - Jan 1 1999

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates",

abstract = "We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.",

author = "Manijeh Razeghi and P. Kung and D. Walker and M. Hamilton and J. Diaz",

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T1 - High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

AU - Razeghi, Manijeh

AU - Kung, P.

AU - Walker, D.

AU - Hamilton, M.

AU - Diaz, J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

AB - We report the lateral epitaxial overgrowth (LEO) of GaN films on (00.1) Al2O3 and (111) Si substrates by metalorganic chemical vapor deposition. The LEO on Si substrates was possible after achieving quasi monocrystalline GaN template films on (111) Si substrates. X-ray diffraction, photoluminescence, scanning electron microscopy and atomic force microscopy were used to assess the quality of the LEO films. Lateral growth rates more than 5 times as high as vertical growth rates were achieved for both LEO growths of GaN on sapphire and silicon substrates.

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M3 - Article

AN - SCOPUS:0032642467

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

High quality LEO growth and characterization of GaN films on Al₂O₃ and Si substrates

Abstract

ASJC Scopus subject areas

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