High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

Junhee Lee; Lakshay Gautam; Manijeh Razeghi

doi:10.1063/5.0170383

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlO_x interlayer

Junhee Lee, Lakshay Gautam, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report high-quality Ga₂O₃ grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlO_x interlayer at the Ga₂O₃/AlGaN interface. AlO_x interlayer was found to enable the growth of single crystalline Ga₂O₃ on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga₂O₃ epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

Original language	English (US)
Article number	151902
Journal	Applied Physics Letters
Volume	123
Issue number	15
DOIs	https://doi.org/10.1063/5.0170383
State	Published - Oct 9 2023

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/5.0170383

Cite this

@article{271a86478cd94cbaa2ef9ed9b0bc0a42,

title = "High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer",

abstract = "We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.",

author = "Junhee Lee and Lakshay Gautam and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = oct,

day = "9",

doi = "10.1063/5.0170383",

language = "English (US)",

volume = "123",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlOx interlayer

AU - Lee, Junhee

AU - Gautam, Lakshay

AU - Razeghi, Manijeh

PY - 2023/10/9

Y1 - 2023/10/9

N2 - We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

AB - We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

UR - http://www.scopus.com/inward/record.url?scp=85174947918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85174947918&partnerID=8YFLogxK

U2 - 10.1063/5.0170383

DO - 10.1063/5.0170383

M3 - Article

AN - SCOPUS:85174947918

SN - 0003-6951

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151902

ER -

High-quality MOCVD-grown heteroepitaxial gallium oxide growth on III-nitrides enabled by AlO_x interlayer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this