Keyphrases
AlOx
100%
III-nitrides
100%
Ga2O3
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Heteroepitaxial Structures
100%
Aluminum Gallium Nitride (AlGaN)
100%
Oxide Growth
100%
Gallium Oxide
100%
Heterostructure
75%
Electron Mobility
50%
Sapphire Substrate
50%
Nitrided Oxide
50%
Characterization Techniques
25%
Electrical Characterization
25%
Material System
25%
Sapphire
25%
Optical Characterization
25%
Transistor
25%
Structural Characterization
25%
Material Quality
25%
Lattice Mismatch
25%
Single-crystalline
25%
Power Electronics
25%
Epilayer
25%
Enhanced Mobility
25%
Chemical Vapor Deposition Reactor
25%
Material Science
Sapphire
100%
Heterojunction
100%
Gallium
100%
Nitride Compound
100%
Oxide Compound
100%
Aluminum Nitride
66%
Electron Mobility
66%
Epilayers
33%
Transistor
33%
Lattice Mismatch
33%
Metal-Organic Chemical Vapor Deposition
33%