High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized with a Photo-Activated Metal-Oxide Nanocluster Precursor

Jeong Wan Jo; Kyung Tae Kim; Antonio Facchetti; Myung Gil Kim; Sung Kyu Park

doi:10.1109/LED.2018.2870424

High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized with a Photo-Activated Metal-Oxide Nanocluster Precursor

Jeong Wan Jo^*, Kyung Tae Kim, Antonio Facchetti, Myung Gil Kim, Sung Kyu Park

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

High-quality solution-derived amorphous alumina (a-Al₂O₃) dielectric has been achieved with [Al 13(μ3-OH 6μ-OH)₁₈ (H₂O)₂₄](NO₃)₁₅(Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense a-Al₂O₃ thin films via an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based a-Al₂O₃ thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed a-Al₂O₃ layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based a-Al₂O₃ dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively.

Original language	English (US)
Article number	8466808
Pages (from-to)	1668-1671
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/LED.2018.2870424
State	Published - Nov 2018

Funding

Manuscript received August 6, 2018; accepted September 10, 2018. Date of publication September 17, 2018; date of current version October 23, 2018. This work was supported in part by the Chung-Ang University Research Grants in 2017, in part by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) [No.2017-0-00048, Development of Core Technologies for Tactile Input/Output Panels in Skintronics (Skin Electronics)], and in part by the Development of Excellent Waterproof and Impact Resistance Mobile Phone Bezel Adhesive Tape With Thickness Less Than 80 µm through the Korea Government Ministry of Trade, Industry and Energy under Grant 2016-10067433. The review of this letter was arranged by Editor A. V. Y. Thean. (Corresponding author: Sung Kyu Park.) J.-W. Jo, K.-T. Kim, and S. K. Park are with the School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, South Korea (e-mail: [email protected]).

Keywords

Aluminum oxide
a-Al2O3
nanocluster
photochemical activation
solution process.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2018.2870424

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title = "High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized with a Photo-Activated Metal-Oxide Nanocluster Precursor",

abstract = "High-quality solution-derived amorphous alumina (a-Al2O3) dielectric has been achieved with [Al 13(μ3-OH 6μ-OH)18 (H2O)24](NO3)15(Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense a-Al2O3 thin films via an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based a-Al2O3 thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed a-Al2O3 layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based a-Al2O3 dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively.",

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AB - High-quality solution-derived amorphous alumina (a-Al2O3) dielectric has been achieved with [Al 13(μ3-OH 6μ-OH)18 (H2O)24](NO3)15(Al-13 nanocluster) as a precursor and a local structure-controllable activation process via deep-UV-induced photochemical activation. The synergetic combination of an Al-13 nanocluster precursor and high-energetic photochemical activation enables the formation of highly dense a-Al2O3 thin films via an efficient dissociation and rearrangement of the nanocluster skeleton. The electrical characteristics of the nanocluster-based a-Al2O3 thin films were investigated in terms of their operative electronic conduction mechanism by comparing conventional nitrate-based and vacuum-deposited films. From these results, it was found that the leakage current density of solution-processed a-Al2O3 layers is largely affected by their precursor structures. Finally, to demonstrate the versatility of the high-quality nanocluster-based a-Al2O3 dielectrics, carbon nanotube and metal-oxide thin-film transistors were fabricated on low thermal budget stretchable and rigid substrates, respectively.

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High-Quality Solution-Processed Metal-Oxide Gate Dielectrics Realized with a Photo-Activated Metal-Oxide Nanocluster Precursor

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