High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

Yajun Wei; Junjik Bae; Aaron Gin; Andrew Hood; Manijeh Razeghi; Gail J. Brown; Meimei Tidrow

doi:10.1063/1.1606506

High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

Yajun Wei^*, Junjik Bae, Aaron Gin, Andrew Hood, Manijeh Razeghi, Gail J. Brown, Meimei Tidrow

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.

Original language	English (US)
Pages (from-to)	4720-4722
Number of pages	3
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1606506
State	Published - Oct 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1606506

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abstract = "Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.",

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T1 - High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

AU - Wei, Yajun

AU - Bae, Junjik

AU - Gin, Aaron

AU - Hood, Andrew

AU - Razeghi, Manijeh

AU - Brown, Gail J.

AU - Tidrow, Meimei

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.

AB - Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.

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High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

Abstract

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