Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.
ASJC Scopus subject areas
- Physics and Astronomy(all)