High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering

Yajun Wei*, Junjik Bae, Aaron Gin, Andrew Hood, Manijeh Razeghi, Gail J. Brown, Meimei Tidrow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.

Original languageEnglish (US)
Pages (from-to)4720-4722
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
StatePublished - Oct 1 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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