Abstract
Most recent advances in the area of type II InAs/GaSb superlattices were presented. The mismatch between the superlattices and the GaSb (001) substrate has been reduced to 0.1%. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV. Results showed that the integrated photoluminescence intensity was dependent on the fluent laser power.
Original language | English (US) |
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Pages (from-to) | 4720-4722 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 7 |
DOIs | |
State | Published - Oct 1 2003 |
ASJC Scopus subject areas
- Physics and Astronomy(all)