High-quality visible-blind AlGaN p-i-n photodiodes

E. Monroy*, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

165 Scopus citations


We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0≤x≤0.15) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible rejection of six orders of magnitude with a cutoff wavelength that shifts from 365 to 338 nm. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances, the transient response becomes non-exponential, with a decay time longer than the RC constant. This behavior is justified by the strong frequency dependence of the device capacitance. By an admittance analysis, we conclude that speed is not limited by deep levels, but by substitutional Mg capture and emission time.

Original languageEnglish (US)
Pages (from-to)1171-1173
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'High-quality visible-blind AlGaN p-i-n photodiodes'. Together they form a unique fingerprint.

Cite this