High quantum efficiency AlGaN solar-blind p-i-n photodiodes

R. McClintock; A. Yasan; K. Mayes; D. Shiell; S. R. Darvish; P. Kung; M. Razeghi

doi:10.1063/1.1650550

High quantum efficiency AlGaN solar-blind p-i-n photodiodes

R. McClintock^*, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

High quantum efficiency of 60% under no applied bias for AlGaN-based p-i-n solar-blind photodiodes was demonstrated. The external quantum efficiency can be improved to a value as high as 72% under 5 V reverse bias. The high performance of the devices was due to the high quality AlN and AlGaN/AlN superlattice layers as well as high lateral conductivity n-type AlGaN. The high quality template layers helps reduce the number of defects in the device structure and keeps the subsequent layers under compressive strain to avoid cracking.

Original language	English (US)
Pages (from-to)	1248-1250
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	8
DOIs	https://doi.org/10.1063/1.1650550
State	Published - Feb 23 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1650550

Cite this

@article{8485b0b5c4a148bea28f6802b876edc0,

title = "High quantum efficiency AlGaN solar-blind p-i-n photodiodes",

abstract = "High quantum efficiency of 60% under no applied bias for AlGaN-based p-i-n solar-blind photodiodes was demonstrated. The external quantum efficiency can be improved to a value as high as 72% under 5 V reverse bias. The high performance of the devices was due to the high quality AlN and AlGaN/AlN superlattice layers as well as high lateral conductivity n-type AlGaN. The high quality template layers helps reduce the number of defects in the device structure and keeps the subsequent layers under compressive strain to avoid cracking.",

author = "R. McClintock and A. Yasan and K. Mayes and D. Shiell and Darvish, {S. R.} and P. Kung and M. Razeghi",

year = "2004",

month = feb,

day = "23",

doi = "10.1063/1.1650550",

language = "English (US)",

volume = "84",

pages = "1248--1250",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - High quantum efficiency AlGaN solar-blind p-i-n photodiodes

AU - McClintock, R.

AU - Yasan, A.

AU - Mayes, K.

AU - Shiell, D.

AU - Darvish, S. R.

AU - Kung, P.

AU - Razeghi, M.

PY - 2004/2/23

Y1 - 2004/2/23

N2 - High quantum efficiency of 60% under no applied bias for AlGaN-based p-i-n solar-blind photodiodes was demonstrated. The external quantum efficiency can be improved to a value as high as 72% under 5 V reverse bias. The high performance of the devices was due to the high quality AlN and AlGaN/AlN superlattice layers as well as high lateral conductivity n-type AlGaN. The high quality template layers helps reduce the number of defects in the device structure and keeps the subsequent layers under compressive strain to avoid cracking.

AB - High quantum efficiency of 60% under no applied bias for AlGaN-based p-i-n solar-blind photodiodes was demonstrated. The external quantum efficiency can be improved to a value as high as 72% under 5 V reverse bias. The high performance of the devices was due to the high quality AlN and AlGaN/AlN superlattice layers as well as high lateral conductivity n-type AlGaN. The high quality template layers helps reduce the number of defects in the device structure and keeps the subsequent layers under compressive strain to avoid cracking.

UR - http://www.scopus.com/inward/record.url?scp=1642273807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642273807&partnerID=8YFLogxK

U2 - 10.1063/1.1650550

DO - 10.1063/1.1650550

M3 - Article

AN - SCOPUS:1642273807

SN - 0003-6951

VL - 84

SP - 1248

EP - 1250

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this