High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Ryan P McClintock*, A. Yasan, K. Mayes, D. Shiell, S. R. Darvish, P. Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

114 Scopus citations

Abstract

High quantum efficiency of 60% under no applied bias for AlGaN-based p-i-n solar-blind photodiodes was demonstrated. The external quantum efficiency can be improved to a value as high as 72% under 5 V reverse bias. The high performance of the devices was due to the high quality AlN and AlGaN/AlN superlattice layers as well as high lateral conductivity n-type AlGaN. The high quality template layers helps reduce the number of defects in the device structure and keeps the subsequent layers under compressive strain to avoid cracking.

Original languageEnglish (US)
Pages (from-to)1248-1250
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number8
DOIs
StatePublished - Feb 23 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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