High quantum efficiency back-illuminated GaN avalanche photodiodes

C. Bayram; J. L. Pau; R. McClintock; M. Razeghi; M. P. Ulmer; D. Silversmith

doi:10.1063/1.3039061

High quantum efficiency back-illuminated GaN avalanche photodiodes

C. Bayram^*, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, D. Silversmith

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n -layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.

Original language	English (US)
Article number	211107
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3039061
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High quantum efficiency back-illuminated GaN avalanche photodiodes",

abstract = "Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n -layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.",

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T1 - High quantum efficiency back-illuminated GaN avalanche photodiodes

AU - Bayram, C.

AU - Pau, J. L.

AU - McClintock, R.

AU - Razeghi, M.

AU - Ulmer, M. P.

AU - Silversmith, D.

PY - 2008

Y1 - 2008

N2 - Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n -layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.

AB - Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n -layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.

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High quantum efficiency back-illuminated GaN avalanche photodiodes

Abstract

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