High quantum efficiency back-illuminated GaN avalanche photodiodes

C. Bayram*, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, D. Silversmith

*Corresponding author for this work

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n -layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.

Original languageEnglish (US)
Article number211107
JournalApplied Physics Letters
Volume93
Issue number21
DOIs
StatePublished - Dec 8 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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