High quantum efficiency mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes grown by metal-organic chemical vapor deposition

Donghai Wu, Quentin Durlin, Arash Dehzangi, Yiyun Zhang, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 μm, the dark current density is 3.3 × 10 -4 A/cm 2 under -20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 × 10 11 cm Hz 1/2 /W is achieved at 4.0 μm under -20 mV bias at 150 K.

Original languageEnglish (US)
Article number011104
JournalApplied Physics Letters
Volume114
Issue number1
DOIs
StatePublished - Jan 7 2019

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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