We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 μm, the dark current density is 3.3 × 10 -4 A/cm 2 under -20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 × 10 11 cm Hz 1/2 /W is achieved at 4.0 μm under -20 mV bias at 150 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)