High quantum efficiency mid-wavelength infrared type-II InAs/InAs                         1-x                         Sb                         x                          superlattice photodiodes grown by metal-organic chemical vapor deposition

Donghai Wu; Quentin Durlin; Arash Dehzangi; Yiyun Zhang; Manijeh Razeghi

doi:10.1063/1.5058714

High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition

Donghai Wu, Quentin Durlin, Arash Dehzangi, Yiyun Zhang, Manijeh Razeghi^*

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 μm, the dark current density is 3.3 × 10 ^-4 A/cm ² under -20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 × 10 ¹¹ cm Hz ^1/2 /W is achieved at 4.0 μm under -20 mV bias at 150 K.

Original language	English (US)
Article number	011104
Journal	Applied Physics Letters
Volume	114
Issue number	1
DOIs	https://doi.org/10.1063/1.5058714
State	Published - Jan 7 2019

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.5058714

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Wu, D., Durlin, Q., Dehzangi, A., Zhang, Y., & Razeghi, M. (2019). High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition Applied Physics Letters, 114(1), Article 011104. https://doi.org/10.1063/1.5058714

Wu, Donghai ; Durlin, Quentin ; Dehzangi, Arash et al. / High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition In: Applied Physics Letters. 2019 ; Vol. 114, No. 1.

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title = " High quantum efficiency mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes grown by metal-organic chemical vapor deposition ",

abstract = " We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 μm, the dark current density is 3.3 × 10 -4 A/cm 2 under -20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 × 10 11 cm Hz 1/2 /W is achieved at 4.0 μm under -20 mV bias at 150 K.",

author = "Donghai Wu and Quentin Durlin and Arash Dehzangi and Yiyun Zhang and Manijeh Razeghi",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

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Wu, D, Durlin, Q, Dehzangi, A, Zhang, Y & Razeghi, M 2019, ' High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition ', Applied Physics Letters, vol. 114, no. 1, 011104. https://doi.org/10.1063/1.5058714

High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition . / Wu, Donghai; Durlin, Quentin; Dehzangi, Arash et al.
In: Applied Physics Letters, Vol. 114, No. 1, 011104, 07.01.2019.

Research output: Contribution to journal › Article › peer-review

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AB - We report the growth and characterization of mid-wavelength infrared type-II InAs/InAs 1-x Sb x superlattice photodiodes on GaSb substrates grown by metal-organic chemical vapor deposition. At 150 K, the 50% cut-off wavelength is 5.0 μm, the dark current density is 3.3 × 10 -4 A/cm 2 under -20 mV bias, and the peak responsivity is 1.76 A/W corresponding to a quantum efficiency of 55% without anti-reflection coating. A specific detectivity of 1.2 × 10 11 cm Hz 1/2 /W is achieved at 4.0 μm under -20 mV bias at 150 K.

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Wu D, Durlin Q, Dehzangi A, Zhang Y, Razeghi M. High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition Applied Physics Letters. 2019 Jan 7;114(1):011104. doi: 10.1063/1.5058714

High quantum efficiency mid-wavelength infrared type-II InAs/InAs _1-x Sb _x superlattice photodiodes grown by metal-organic chemical vapor deposition

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