High quantum efficiency solar-blind photodetectors

Ryan P McClintock*, Alireza Yasan, Kathryn Mayes, Derek Shiell, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations

Abstract

We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

Original languageEnglish (US)
Pages (from-to)434-444
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5359
DOIs
StatePublished - Sep 13 2004
EventQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
Duration: Jan 25 2004Jan 29 2004

Keywords

  • AlGaN
  • Back-Illuminated
  • p-i-n
  • Photodetector
  • Solar Blind
  • Ultraviolet

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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