High quantum efficiency solar-blind photodetectors

Ryan McClintock; Alireza Yasan; Kathryn Mayes; Derek Shiell; Shaban Ramezani Darvish; Patrick Kung; Manijeh Razeghi

doi:10.1117/12.529348

High quantum efficiency solar-blind photodetectors

Ryan McClintock^*, Alireza Yasan, Kathryn Mayes, Derek Shiell, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

27 Scopus citations

Abstract

We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al_0.87Ga_0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al_0.5Ga_0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

Original language	English (US)
Pages (from-to)	434-444
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5359
DOIs	https://doi.org/10.1117/12.529348
State	Published - 2004
Event	Quantum Sensing and Nanophotonic Devices - San Jose, CA, United States Duration: Jan 25 2004 → Jan 29 2004

Keywords

AlGaN
Back-Illuminated
Photodetector
Solar Blind
Ultraviolet
p-i-n

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

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10.1117/12.529348

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@article{49d1ae78c56643cb9e39670867e0cbac,

title = "High quantum efficiency solar-blind photodetectors",

abstract = "We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.",

keywords = "AlGaN, Back-Illuminated, Photodetector, Solar Blind, Ultraviolet, p-i-n",

author = "Ryan McClintock and Alireza Yasan and Kathryn Mayes and Derek Shiell and Darvish, {Shaban Ramezani} and Patrick Kung and Manijeh Razeghi",

year = "2004",

doi = "10.1117/12.529348",

language = "English (US)",

volume = "5359",

pages = "434--444",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Quantum Sensing and Nanophotonic Devices ; Conference date: 25-01-2004 Through 29-01-2004",

}

TY - JOUR

T1 - High quantum efficiency solar-blind photodetectors

AU - McClintock, Ryan

AU - Yasan, Alireza

AU - Mayes, Kathryn

AU - Shiell, Derek

AU - Darvish, Shaban Ramezani

AU - Kung, Patrick

AU - Razeghi, Manijeh

PY - 2004

Y1 - 2004

N2 - We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

AB - We report AlGaN-based back-illuminated solar-blind p-i-n photodetectors with a record peak responsivity of 150 mA/W at 280 nm, corresponding to a high external quantum efficiency of 68%, increasing to 74% under 5 volts reverse bias. Through optimization of the p-AlGaN layer, we were able to remove the out-of-band negative photoresponse originating from the Schottky-like p-type metal contact, and hence significantly improve the degree of solar-blindness. We attribute the high efficiency of these devices to the use of very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material, a highly conductive Si-In co-doped Al0.5Ga0.5N layer, and the elimination of the negative photoresponse through improvement of the p-type AlGaN.

KW - AlGaN

KW - Back-Illuminated

KW - Photodetector

KW - Solar Blind

KW - Ultraviolet

KW - p-i-n

UR - http://www.scopus.com/inward/record.url?scp=4344685680&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344685680&partnerID=8YFLogxK

U2 - 10.1117/12.529348

DO - 10.1117/12.529348

M3 - Conference article

AN - SCOPUS:4344685680

SN - 0277-786X

VL - 5359

SP - 434

EP - 444

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Quantum Sensing and Nanophotonic Devices

Y2 - 25 January 2004 through 29 January 2004

ER -

High quantum efficiency solar-blind photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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