High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes

Pierre Yves Delaunay, Binh Minh Nguyen, Darin Hoffman, Andrew Hood, Edward Kwei Wei Huang, Manijeh Razeghi*, Meimei Z. Tidrow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

A n-i-p-p-i-n photodiode based on type-II InAsGaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 μm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 μm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.

Original languageEnglish (US)
Article number111112
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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