High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes

Pierre Yves Delaunay; Binh Minh Nguyen; Darin Hoffman; Andrew Hood; Edward Kwei Wei Huang; Manijeh Razeghi; Meimei Z. Tidrow

doi:10.1063/1.2898528

High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes

Pierre Yves Delaunay, Binh Minh Nguyen, Darin Hoffman, Andrew Hood, Edward Kwei Wei Huang, Manijeh Razeghi^*, Meimei Z. Tidrow

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

A n-i-p-p-i-n photodiode based on type-II InAsGaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 μm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 μm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.

Original language	English (US)
Article number	111112
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2898528
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes",

abstract = "A n-i-p-p-i-n photodiode based on type-II InAsGaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 μm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 μm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.",

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T1 - High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes

AU - Delaunay, Pierre Yves

AU - Nguyen, Binh Minh

AU - Hoffman, Darin

AU - Hood, Andrew

AU - Huang, Edward Kwei Wei

AU - Razeghi, Manijeh

AU - Tidrow, Meimei Z.

PY - 2008

Y1 - 2008

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AB - A n-i-p-p-i-n photodiode based on type-II InAsGaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 μm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 μm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.

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High quantum efficiency two color type-II InAsGaSb n-i-p-p-i-n photodiodes

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