TY - JOUR
T1 - High-rate reactive sputtering of yttria-stabilized zirconia using pulsed d.c. power
AU - Yashar, P.
AU - Rechner, J.
AU - Wong, M. S.
AU - Sproul, W. D.
AU - Barnett, S. A.
N1 - Funding Information:
project is sponsored by the US Ajr Force Office of Scientific Research (AFOSR), grant number F39620-950177.
PY - 1997/10
Y1 - 1997/10
N2 - Polycrystalline yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputtering of a Zr-Y alloy target in an Ar-O2 atmosphere. Using a combination of pulsed d.c. power at a frequency of 70 kHz at both the target and substrate, and partial pressure control of the O2 gas, arcing was controlled and a stable process was obtained. Fully-oxidized cubic (Y2O3)0.10(ZrO2)0.90 films were deposited at rates as high as 210 nm/min, or ∼60% of the metal alloy deposition rate. For films deposited onto electrically-conducting substrates, the structure and hardness of the films were affected by the negative substrate bias Vs. With Vs = floating (34 V), X-ray diffraction scans showed a strong (200) texture, which switched to a strong (111) texture for Vs = 80-150 V. Scanning electron microscopy showed a porous structure with no substrate bias and a dense structure with a bias of Vs = 80 V. The film hardness measured using nanoindentation was ≈ 4 GPa for Vs = 34 V, and reached a maximum of 17 GPa, comparable to bulk YSZ, at Vs = 80-100 V. For films deposited onto glass substrates, the pulsed d.c. substrate bias had no effect, such that porous, low-hardness YSZ was obtained. This was due to the very short time constant for charging the thick glass substrate, compared with the d.c. pulse period.
AB - Polycrystalline yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputtering of a Zr-Y alloy target in an Ar-O2 atmosphere. Using a combination of pulsed d.c. power at a frequency of 70 kHz at both the target and substrate, and partial pressure control of the O2 gas, arcing was controlled and a stable process was obtained. Fully-oxidized cubic (Y2O3)0.10(ZrO2)0.90 films were deposited at rates as high as 210 nm/min, or ∼60% of the metal alloy deposition rate. For films deposited onto electrically-conducting substrates, the structure and hardness of the films were affected by the negative substrate bias Vs. With Vs = floating (34 V), X-ray diffraction scans showed a strong (200) texture, which switched to a strong (111) texture for Vs = 80-150 V. Scanning electron microscopy showed a porous structure with no substrate bias and a dense structure with a bias of Vs = 80 V. The film hardness measured using nanoindentation was ≈ 4 GPa for Vs = 34 V, and reached a maximum of 17 GPa, comparable to bulk YSZ, at Vs = 80-100 V. For films deposited onto glass substrates, the pulsed d.c. substrate bias had no effect, such that porous, low-hardness YSZ was obtained. This was due to the very short time constant for charging the thick glass substrate, compared with the d.c. pulse period.
KW - Reactive sputtering
KW - Yttria-stabilized zirconia
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U2 - 10.1016/S0257-8972(97)00270-3
DO - 10.1016/S0257-8972(97)00270-3
M3 - Article
AN - SCOPUS:0031246542
VL - 94-95
SP - 333
EP - 338
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
ER -