High-resolution and analytical electron microscopy of HgBa2CuO4+δ a new copper-oxide superconductor

H. Zhang, Y. Y. Wang, V. P. Dravid*, J. L. Wagner, D. G. Hinks, J. D. Jorgensen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

High-resolution and analytical electron microscopy (HREM and AEM, respectively) techniques have been utilized to probe the submicroscopic details of crystallography, chemistry and electronic structure of HgBa2CuO4+δ, a recently discovered single- layer copper-oxide superconductor. Core loss EELS analysis of O K edge reveals a pre-edge similar to many p-type doped copper oxide superconductors, while a free change carrier plasmon has been identified with low loss EELS. It is discovered that the delocalized hole carrier concentration in a lower-Tc sample (argon annealed), as inferred from oscillator strengths, is about ≈60% of that of a fully oxygenated sample, which has a higher Tc. It is also discovered that there is a strong excitation just above the delocalized hole state (by ≈ 2 eV) in both lower- and higher-Tc samples. These observations are compared with other cuprate superconductors.

Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume222
Issue number1-2
DOIs
StatePublished - Mar 10 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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