High-resolution and analytical electron microscopy of HgBa2CuO4+δ a new copper-oxide superconductor

H. Zhang; Y. Y. Wang; V. P. Dravid; J. L. Wagner; D. G. Hinks; J. D. Jorgensen

doi:10.1016/0921-4534(94)90106-6

High-resolution and analytical electron microscopy of HgBa₂CuO_4+δ a new copper-oxide superconductor

H. Zhang, Y. Y. Wang, V. P. Dravid^*, J. L. Wagner, D. G. Hinks, J. D. Jorgensen

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

High-resolution and analytical electron microscopy (HREM and AEM, respectively) techniques have been utilized to probe the submicroscopic details of crystallography, chemistry and electronic structure of HgBa₂CuO_4+δ, a recently discovered single- layer copper-oxide superconductor. Core loss EELS analysis of O K edge reveals a pre-edge similar to many p-type doped copper oxide superconductors, while a free change carrier plasmon has been identified with low loss EELS. It is discovered that the delocalized hole carrier concentration in a lower-T_c sample (argon annealed), as inferred from oscillator strengths, is about ≈60% of that of a fully oxygenated sample, which has a higher T_c. It is also discovered that there is a strong excitation just above the delocalized hole state (by ≈ 2 eV) in both lower- and higher-T_c samples. These observations are compared with other cuprate superconductors.

Original language	English (US)
Pages (from-to)	1-6
Number of pages	6
Journal	Physica C: Superconductivity and its applications
Volume	222
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4534(94)90106-6
State	Published - Mar 10 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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title = "High-resolution and analytical electron microscopy of HgBa2CuO4+δ a new copper-oxide superconductor",

abstract = "High-resolution and analytical electron microscopy (HREM and AEM, respectively) techniques have been utilized to probe the submicroscopic details of crystallography, chemistry and electronic structure of HgBa2CuO4+δ, a recently discovered single- layer copper-oxide superconductor. Core loss EELS analysis of O K edge reveals a pre-edge similar to many p-type doped copper oxide superconductors, while a free change carrier plasmon has been identified with low loss EELS. It is discovered that the delocalized hole carrier concentration in a lower-Tc sample (argon annealed), as inferred from oscillator strengths, is about ≈60% of that of a fully oxygenated sample, which has a higher Tc. It is also discovered that there is a strong excitation just above the delocalized hole state (by ≈ 2 eV) in both lower- and higher-Tc samples. These observations are compared with other cuprate superconductors.",

author = "H. Zhang and Wang, {Y. Y.} and Dravid, {V. P.} and Wagner, {J. L.} and Hinks, {D. G.} and Jorgensen, {J. D.}",

note = "Funding Information: The research is supported by the NSF-DMR through the Science and Technology Center for Su- perconductivity (STcS, NSF Cooperative Agreement No. NSF-DMR-91-20000).",

year = "1994",

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doi = "10.1016/0921-4534(94)90106-6",

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AU - Dravid, V. P.

AU - Wagner, J. L.

AU - Hinks, D. G.

AU - Jorgensen, J. D.

N1 - Funding Information: The research is supported by the NSF-DMR through the Science and Technology Center for Su- perconductivity (STcS, NSF Cooperative Agreement No. NSF-DMR-91-20000).

PY - 1994/3/10

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N2 - High-resolution and analytical electron microscopy (HREM and AEM, respectively) techniques have been utilized to probe the submicroscopic details of crystallography, chemistry and electronic structure of HgBa2CuO4+δ, a recently discovered single- layer copper-oxide superconductor. Core loss EELS analysis of O K edge reveals a pre-edge similar to many p-type doped copper oxide superconductors, while a free change carrier plasmon has been identified with low loss EELS. It is discovered that the delocalized hole carrier concentration in a lower-Tc sample (argon annealed), as inferred from oscillator strengths, is about ≈60% of that of a fully oxygenated sample, which has a higher Tc. It is also discovered that there is a strong excitation just above the delocalized hole state (by ≈ 2 eV) in both lower- and higher-Tc samples. These observations are compared with other cuprate superconductors.

AB - High-resolution and analytical electron microscopy (HREM and AEM, respectively) techniques have been utilized to probe the submicroscopic details of crystallography, chemistry and electronic structure of HgBa2CuO4+δ, a recently discovered single- layer copper-oxide superconductor. Core loss EELS analysis of O K edge reveals a pre-edge similar to many p-type doped copper oxide superconductors, while a free change carrier plasmon has been identified with low loss EELS. It is discovered that the delocalized hole carrier concentration in a lower-Tc sample (argon annealed), as inferred from oscillator strengths, is about ≈60% of that of a fully oxygenated sample, which has a higher Tc. It is also discovered that there is a strong excitation just above the delocalized hole state (by ≈ 2 eV) in both lower- and higher-Tc samples. These observations are compared with other cuprate superconductors.

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High-resolution and analytical electron microscopy of HgBa₂CuO_4+δ a new copper-oxide superconductor

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