High resolution backside imaging and thermography using a numerical aperture increasing lens

M. S. Ünlü; S. B. Ippolito; M. G. Eraslan; S. A. Thorne; A. Vamivakas; B. B. Goldberg; Y. Leblebici

High resolution backside imaging and thermography using a numerical aperture increasing lens

M. S. Ünlü^*, S. B. Ippolito, M. G. Eraslan, S. A. Thorne, A. Vamivakas, B. B. Goldberg, Y. Leblebici

^*Corresponding author for this work

Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanoscale imaging of defects in ICs is a great current technological challenge as IC feature sizes continue to shrink. We have developed novel techniques based on a Numerical Aperture Increasing Lens (NAIL) to study semiconductors at very high spatial resolution. The NAIL is placed on the surface of a sample and its convex surface effectively transforms the NAIL and the planar sample into an integrated solid immersion lens. Addition of the NAIL to a standard microscope increases the NA by a factor of square of the index n, to a maximum of NA = n. In silicon, the NA is increased by a factor of 13, to NA = 3.6. The spatial resolution improvement laterally is about a factor of 4 while longitudinally it is a factor of 12.5 corresponding to an overall reduction of the volume of interrogation by a factor of 50. Subsurface solid immersion microscopy can be applied to thermal imaging of blackbody radiation at IR wavelengths. We have designed, built, and demonstrated the use of a subsurface solid immersion microscope with capability for confocal imaging in 3-5 μm wavelength range and demonstrated a resolution of 1.4μm, representing the highest resolution subsurface thermography to date.

Original language	English (US)
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Editors	M. Laudon, B. Romanowicz
Pages	8-10
Number of pages	3
Volume	3
State	Published - Nov 2 2004
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: Mar 7 2004 → Mar 11 2004

Other

Other	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country/Territory	United States
City	Boston, MA
Period	3/7/04 → 3/11/04

Keywords

Failure analysis
High-resolution
Solid immersion lens
Thermal imaging

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{09d22606a68f4f92b588eb4001319961,

title = "High resolution backside imaging and thermography using a numerical aperture increasing lens",

abstract = "Nanoscale imaging of defects in ICs is a great current technological challenge as IC feature sizes continue to shrink. We have developed novel techniques based on a Numerical Aperture Increasing Lens (NAIL) to study semiconductors at very high spatial resolution. The NAIL is placed on the surface of a sample and its convex surface effectively transforms the NAIL and the planar sample into an integrated solid immersion lens. Addition of the NAIL to a standard microscope increases the NA by a factor of square of the index n, to a maximum of NA = n. In silicon, the NA is increased by a factor of 13, to NA = 3.6. The spatial resolution improvement laterally is about a factor of 4 while longitudinally it is a factor of 12.5 corresponding to an overall reduction of the volume of interrogation by a factor of 50. Subsurface solid immersion microscopy can be applied to thermal imaging of blackbody radiation at IR wavelengths. We have designed, built, and demonstrated the use of a subsurface solid immersion microscope with capability for confocal imaging in 3-5 μm wavelength range and demonstrated a resolution of 1.4μm, representing the highest resolution subsurface thermography to date.",

keywords = "Failure analysis, High-resolution, Solid immersion lens, Thermal imaging",

author = "{\"U}nl{\"u}, {M. S.} and Ippolito, {S. B.} and Eraslan, {M. G.} and Thorne, {S. A.} and A. Vamivakas and Goldberg, {B. B.} and Y. Leblebici",

year = "2004",

month = nov,

day = "2",

language = "English (US)",

isbn = "0972842276",

volume = "3",

pages = "8--10",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 ; Conference date: 07-03-2004 Through 11-03-2004",

}

Ünlü, MS, Ippolito, SB, Eraslan, MG, Thorne, SA, Vamivakas, A, Goldberg, BB & Leblebici, Y 2004, High resolution backside imaging and thermography using a numerical aperture increasing lens. in M Laudon & B Romanowicz (eds), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. vol. 3, pp. 8-10, 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Boston, MA, United States, 3/7/04.

TY - GEN

T1 - High resolution backside imaging and thermography using a numerical aperture increasing lens

AU - Ünlü, M. S.

AU - Ippolito, S. B.

AU - Eraslan, M. G.

AU - Thorne, S. A.

AU - Vamivakas, A.

AU - Goldberg, B. B.

AU - Leblebici, Y.

PY - 2004/11/2

Y1 - 2004/11/2

N2 - Nanoscale imaging of defects in ICs is a great current technological challenge as IC feature sizes continue to shrink. We have developed novel techniques based on a Numerical Aperture Increasing Lens (NAIL) to study semiconductors at very high spatial resolution. The NAIL is placed on the surface of a sample and its convex surface effectively transforms the NAIL and the planar sample into an integrated solid immersion lens. Addition of the NAIL to a standard microscope increases the NA by a factor of square of the index n, to a maximum of NA = n. In silicon, the NA is increased by a factor of 13, to NA = 3.6. The spatial resolution improvement laterally is about a factor of 4 while longitudinally it is a factor of 12.5 corresponding to an overall reduction of the volume of interrogation by a factor of 50. Subsurface solid immersion microscopy can be applied to thermal imaging of blackbody radiation at IR wavelengths. We have designed, built, and demonstrated the use of a subsurface solid immersion microscope with capability for confocal imaging in 3-5 μm wavelength range and demonstrated a resolution of 1.4μm, representing the highest resolution subsurface thermography to date.

AB - Nanoscale imaging of defects in ICs is a great current technological challenge as IC feature sizes continue to shrink. We have developed novel techniques based on a Numerical Aperture Increasing Lens (NAIL) to study semiconductors at very high spatial resolution. The NAIL is placed on the surface of a sample and its convex surface effectively transforms the NAIL and the planar sample into an integrated solid immersion lens. Addition of the NAIL to a standard microscope increases the NA by a factor of square of the index n, to a maximum of NA = n. In silicon, the NA is increased by a factor of 13, to NA = 3.6. The spatial resolution improvement laterally is about a factor of 4 while longitudinally it is a factor of 12.5 corresponding to an overall reduction of the volume of interrogation by a factor of 50. Subsurface solid immersion microscopy can be applied to thermal imaging of blackbody radiation at IR wavelengths. We have designed, built, and demonstrated the use of a subsurface solid immersion microscope with capability for confocal imaging in 3-5 μm wavelength range and demonstrated a resolution of 1.4μm, representing the highest resolution subsurface thermography to date.

KW - Failure analysis

KW - High-resolution

KW - Solid immersion lens

KW - Thermal imaging

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M3 - Conference contribution

AN - SCOPUS:6344237226

SN - 0972842276

SN - 9780972842273

VL - 3

SP - 8

EP - 10

BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Y2 - 7 March 2004 through 11 March 2004

ER -

High resolution backside imaging and thermography using a numerical aperture increasing lens

Abstract

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Keywords

ASJC Scopus subject areas

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