Abstract
A 400 kV high‐resolution electron microscope has been used in the surface profile imaging mode to observe surfaces and surface reactions directly in real time. The processes studied include: the formation of surface oxides on Pd and Ag and on In‐compound semiconductors; surface reduction and metallization, diffusion and accretion on oxide surfaces; and structural rearrangements in small metal particles. It is concluded that the technique can provide unique information about surface phenomena.
Original language | English (US) |
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Pages (from-to) | 135-141 |
Number of pages | 7 |
Journal | Surface and Interface Analysis |
Volume | 10 |
Issue number | 2-3 |
DOIs | |
State | Published - Mar 1987 |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry