High-resolution electron microscopy study of ALMBE InAs grown on (001) GaAs substrates

S. I. Molina*, G. Aragón, A. K. Petford-Long, R. García

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


High-resolution electron microscopy has been used to study the distribution of defects in a heteroepitaxial system with high lattice mismatch (InAs/GaAs, (aInAs-aGaAs)/aGaAs= 7.2%), grown by atomic layer molecular beam epitaxy. The study has been carried out on cross-section samples. A high density of dislocations, mainly of the Lomer type, has been found in a region of the epilayer near the interface. Banding contrast is observed in the interfacial region; possible explanations for this contrast are given.

Original languageEnglish (US)
Pages (from-to)370-375
Number of pages6
Issue number3
StatePublished - Mar 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation


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