High-resolution electron microscopy has been used to study the distribution of defects in a heteroepitaxial system with high lattice mismatch (InAs/GaAs, (aInAs-aGaAs)/aGaAs= 7.2%), grown by atomic layer molecular beam epitaxy. The study has been carried out on cross-section samples. A high density of dislocations, mainly of the Lomer type, has been found in a region of the epilayer near the interface. Banding contrast is observed in the interfacial region; possible explanations for this contrast are given.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics