High-resolution structural study of Bi on Si(001)

G. E. Franklin*, S. Tang, J. C. Woicik, M. J. Bedzyk, A. J. Freeman, J. A. Golovchenko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1×2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption characteristics of other group-V elements (As and Sb) on Si(001).

Original languageEnglish (US)
Pages (from-to)R5515-R5518
JournalPhysical Review B
Volume52
Issue number8
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Condensed Matter Physics

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