High-resolution x-ray diffraction of GaN grown on sapphire substrates

A. Saxler*, M. A. Capano, W. C. Mitchel, P. Kung, X. Zhang, D. Walker, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metallorganic chemical vapor deposition (MOCVD) on (00·1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00·2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

Original languageEnglish (US)
Pages (from-to)477-482
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume449
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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