Abstract
The improvement the Numerical Aperture Increasing Lens (NAIL) which yields in thermal emission microscopy of Si ICs was demonstrated. The theoretical lateral spatial resolution limit was 2.5 μm for conventional thermal emission microscopes operating at wavelengths up to 5μm. This paper experimentally demonstrates a lateral sptial resolution of better than 1.6 μm and a longitudinal spatial resolution of better than 5.2 μm.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 738-739 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 2003 |
| Event | 2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States Duration: Oct 26 2003 → Oct 30 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering