High spatial resolution subsurface thermal emission microscopy

S. B. Ippolito; S. A. Thorne; M. G. Eraslan; B. B. Goldberg; M. S. Ünlü; Y. Leblebici

doi:10.1063/1.1758308

High spatial resolution subsurface thermal emission microscopy

S. B. Ippolito^*, S. A. Thorne, M. G. Eraslan, B. B. Goldberg, M. S. Ünlü, Y. Leblebici

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

The numerical aperture increasing lens (NAIL) technique was applied to subsurface thermal emission microscopy of Si integrated circuits (IC). The improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy were achieved. It was shown that in the experiments, the signal levels are similar, with and without the NAIL, because the NAIL collects more light from the sample, but from a smaller volume. A lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm were experimentally demonstrated for thermal imaging at free space wavelengths up to 5 μm.

Original language	English (US)
Pages (from-to)	4529-4531
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	22
DOIs	https://doi.org/10.1063/1.1758308
State	Published - May 31 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High spatial resolution subsurface thermal emission microscopy",

abstract = "The numerical aperture increasing lens (NAIL) technique was applied to subsurface thermal emission microscopy of Si integrated circuits (IC). The improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy were achieved. It was shown that in the experiments, the signal levels are similar, with and without the NAIL, because the NAIL collects more light from the sample, but from a smaller volume. A lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm were experimentally demonstrated for thermal imaging at free space wavelengths up to 5 μm.",

author = "Ippolito, {S. B.} and Thorne, {S. A.} and Eraslan, {M. G.} and Goldberg, {B. B.} and {\"U}nl{\"u}, {M. S.} and Y. Leblebici",

year = "2004",

month = may,

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doi = "10.1063/1.1758308",

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T1 - High spatial resolution subsurface thermal emission microscopy

AU - Ippolito, S. B.

AU - Thorne, S. A.

AU - Eraslan, M. G.

AU - Goldberg, B. B.

AU - Ünlü, M. S.

AU - Leblebici, Y.

PY - 2004/5/31

Y1 - 2004/5/31

N2 - The numerical aperture increasing lens (NAIL) technique was applied to subsurface thermal emission microscopy of Si integrated circuits (IC). The improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy were achieved. It was shown that in the experiments, the signal levels are similar, with and without the NAIL, because the NAIL collects more light from the sample, but from a smaller volume. A lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm were experimentally demonstrated for thermal imaging at free space wavelengths up to 5 μm.

AB - The numerical aperture increasing lens (NAIL) technique was applied to subsurface thermal emission microscopy of Si integrated circuits (IC). The improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy were achieved. It was shown that in the experiments, the signal levels are similar, with and without the NAIL, because the NAIL collects more light from the sample, but from a smaller volume. A lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm were experimentally demonstrated for thermal imaging at free space wavelengths up to 5 μm.

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DO - 10.1063/1.1758308

M3 - Article

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VL - 84

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EP - 4531

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

High spatial resolution subsurface thermal emission microscopy

Abstract

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