High spatial resolution subsurface thermal emission microscopy

S. B. Ippolito*, S. A. Thorne, M. G. Eraslan, B. B. Goldberg, M. S. Ünlü, Y. Leblebici

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

66 Scopus citations

Abstract

The numerical aperture increasing lens (NAIL) technique was applied to subsurface thermal emission microscopy of Si integrated circuits (IC). The improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy were achieved. It was shown that in the experiments, the signal levels are similar, with and without the NAIL, because the NAIL collects more light from the sample, but from a smaller volume. A lateral spatial resolution of 1.4 μm and a longitudinal spatial resolution of 7.4 μm were experimentally demonstrated for thermal imaging at free space wavelengths up to 5 μm.

Original languageEnglish (US)
Pages (from-to)4529-4531
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number22
DOIs
StatePublished - May 31 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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